eng Oriental Scientific Publishing Company Biosciences Biotechnology Research Asia 0973-1245 2016-12-22 13 4 2359 2363 10.13005/bbra/2406 17450 article Ksenia Nikolaevna Denisova 1 Nastasiya Pavlovna Fantina 1 Alexander Sergeevich Ilin 1 Mikhail Nikolaevich Martyshov 1 Alexander Sergeevich Vorontsov 1 Physics Department, Lomonosov Moscow State University Leninskie Gory 1-2, Moscow, 119991, Russia. The comparative analysis of the influence of femtosecond laser radiation on the structure and conductivity of undoped and boron-doped amorphous hydrogenated silicon was made in this paper. It has been found that the process of nanocrystals formation in an amorphous matrix by femtosecond laser radiation for undoped amorphous hydrogenated silicon samples begins at lower laser energy densities than for doped samples. Different conductivity of undoped and doped samples of amorphous hydrogenated silicon before femtosecond radiation becomes approximately equal upon radiation with laser fluence of 150-160 mJ/ cm². https://www.biotech-asia.org/vol13no4/effect-of-femtosecond-laser-radiation-on-the-structure-and-conductivity-of-boron-doped-amorphous-hydrogenated-silicon/ amorphous hydrogenated silicon; femtosecond laser crystallization; Raman spectroscopy